STD1NK80Z |
RFQ for STD1NK80Z Required Field |
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| Technical/Catalog Information | STD1NK80Z-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Rds On (Max) @ Id, Vgs | 16 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.7nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD1NK80Z 1 STD1NK80Z1 |
| Product | Manufacturers | Pack | D/C |
| STD1NK80Z | - | IPAK TO-251; TO 252 DPAK | `06+(pb-free) |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Typical Application |
Features |
| ·AC ADAPTORS AND BATTERY CHARGERS·SWITH MODE POWER SUPPLIES (SMPS) | `TYPICAL RDS(on) = 13` EXTREMELY HIGH dv/dt CAPABILITY`ESD IMPROVED CAPABILITY`100% AVALANCHE TESTED`NEW HIGH VOLTAGE BENCHMARK`GATE CHARGE MINIMIZED |
| Symbol | Parameter | Value | Unit | ||
| TO-92 | SOT-223 | DPAK/IPAK | |||
| VDS | Drain-source Voltage (VGS = 0) | 800 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) | 800 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 0.3 | 0.25 | 1.0 | A |
| ID | Drain Current (continuous) at TC = 100°C | 0.19 | 0.16 | 0.63 | A |
| IDM (`) | Drain Current (pulsed) | 5 | A | ||
| PTOT | Total Dissipation at TC = 25°C | 3 | 2 | 45 | W |
| Derating Factor | 0.025 | 0.02 | 0.36 | W /°C | |
| VESD(G-S) | Gate source ESD (HBM-C= 100pF, R= 1.5K) | 1000 | V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 | °C | ||
| Models | MFG | Pack |
| STD-001 | ||
| STD03015-222K | ||
| STD17N06 | TO-252 | |
| STD17N06-1 | ||
| STD17N06L | TO-252 | |
| STD17N06LT4 | ||
| STD17NE03L | TO-252 | |
| STD17NE03L-TR | ||
| STD17NE05L-TR | ||
| STD17NE05-TR | ||
| STD17NE06 | ||
| STD17NF03 | ||
| STD17NF03L | IPAK TO-251; TO 252 DPAK | |
| STD17NF03L-1 | IPAK TO-251 | |
| STD17NF03LT4 | ||
| STD17NF03LT4-E | ||
| STD17NF03LT4-E (P/B) | ||
| STD17NF03LT4-E (PB) | ||
| STD17NF25 | ||
| STD1802 | TO 252 DPAK AU BONDING WIRES | |
| STD1802T4 | ||
| STD1805 | TO 252 DPAK AU BONDING WIRES | |
| STD1805T4 | ||
| STD19NE06 | TO-252 | |
| STD19NE06-1 | ||
| STD19NE06L | 2004+ | |
| STD19NE06LT4 | ||
| STD19NE06T4 | ||
| STD1HNC60 | TO-252 | |
| STD1HNC60-1 | ||
| STD1NK60T4 | ||
| STD1NK60-1 | ||
| STD1NK60 | ||
| STD1NC70Z-1 | ||
| STD1NC70Z | ||
| STD1NC60 | ||
| STD1NC40-1 | ||
| STD1NB80-1 | ||
| STD1NB80 | ||
| STD1NB60 | ||
| STD1NB50 | ||
| STD1NA60 | ||
| STD1LNK60Z-1 | ||
| STD1LNC60 | ||
| STD1HNC60T4 | ||
| STD1HNC60 | ||
| STD19NE06L | ||
| STD19NE06 | ||
| STD1955NL | ||
| STD18NF03L |
